08 Fakultät Mathematik und Physik
Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/9
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Item Open Access Investigating superconductivity by tunneling spectroscopy using oxide heterostructures(2017) Fillis-Tsirakis, Evangelos; Mannhart, Jochen (Prof. Dr.)Item Open Access Exploring the growth of refractory metal and sapphire films by thermal laser epitaxy(2024) Majer, Lena N.; Mannhart, Jochen (Prof. Dr.)Item Open Access From Hermitian to non-Hermitian topological phases of matter(2019) Rui, Wenbin; Metzner, Walter (Prof. Dr.)The focus of this thesis lies on extending the theory of topological phases of matter from the Hermitian to the non-Hermitian regime. This includes not only the extension of conventional concepts such as topological invariants and topological boundary states in the theory of Hermitian topological phases, but also the exploration and characterization of entirely new topological phases unique to non-Hermitian systems.Item Open Access Structure and electronic properties of epitaxial monolayer WSe2(2019) Mohammed, Avaise; Takagi, Hidenori (Prof. Dr.)Item Open Access Polarized neutron reflectometry study of complex magnetism and hydrogen incorporation in thin-film structures(2022) Guasco, Laura; Keimer, Bernhard (Prof. Dr.)In this thesis, we present the study of the structural and magnetic properties of simple metals and complex oxide thin films by means of polarized neutron reflectometry. The nuclear and electronic properties of thin films were modified via two routes, namely via hydrogen incorporation, in the case of niobium systems and complex oxide layers, and via depth modulated hole doping, in the case of manganite heterostructures.Item Open Access Real-space spectroscopy of interacting quasiparticles in exotic semimetals(2022) He, Qingyu; Takagi, Hidenori (Prof. Dr.)Item Open Access High quality graphene for magnetic sensing(2022) Herlinger, Patrick; Smet, Jurgen (Dr.)In this thesis, we investigated the reliable fabrication of high quality graphene and its use as Hall transducer material. Charged impurities and random strain fluctuations were identified as main culprits that deteriorate the electrical properties of graphene devices. It was shown that these extrinsic sources of disorder can be reduced through optimized device processing steps as well as the use of a proper substrate material for graphene such as hexagonal boron nitride (hBN). This insulating material is atomically flat and possesses a very low intrinsic density of charged impurities. By performing Raman spectroscopy and electrical transport measurements, both without and with applied magnetic field, on a large number of different types of graphene devices, it was demonstrated that the encapsulation of graphene between hexagonal boron nitride thin films is the best way to obtain high quality graphene devices. However, even for these hBN-encapsulated devices, we still observed a notable sample-to-sample variation of the electrical properties. Therefore, we developed a post-processing technique that allows us to improve the electrical properties of such devices both significantly and reliably. Since our technique is applied after device fabrication, we could also demonstrate its beneficial effect by comparing one and the same device before and after treatment. We then assessed the application of such high quality graphene as Hall transducer material. The dependencies on and between all relevant operating parameters were explored. This allowed us to develop a deep understanding and empirical model for graphene Hall elements, including the interplay between thermal and 1/f noise in these devices. All key performance indicators for Hall sensors were measured and their typical values reported. For comparable device dimensions, hBN-encapsulated graphene Hall elements were found to have the potential to become a strong competitor to existing materials that are used in today's commercial Hall sensors. Unfortunately, the large-scale fabrication of hBN thin films still remains an unresolved challenge for the industrialization of large area, high quality graphene Hall elements. Also, the Si CMOS integration demands further development. Even though the application of graphene in Hall devices is promising, as shown in this work, this use case alone does likely not justify the significant efforts and investments we expect to be necessary to industrialize the fabrication of high quality graphene devices. Instead, these efforts and costs must be shared by developing a common technology platform for 2D materials that can address several commercially attractive applications where graphene or another 2D material offers superior performance as well. We hope that the insights provided in this work can help to accelerate this process.Item Open Access Probing the electronic structure of new 3D Dirac semimetals(2019) Topp, Andreas; Ast, Christian R. (Dr. habil.)In this thesis, ARPES was used to measure the band structure of novel 3D Dirac semimetals, many of which were previously unknown concerning their electronic structure. The main results were obtained characterizing materials of space group (SG) no. 129 and more specifically ZrSiS and related compounds.Item Open Access Heterodyne sensing of microwaves with a quantum sensor(2021) Meinel, Jonas; Vorobyov, Vadim; Yavkin, Boris; Dasari, Durga; Sumiya, Hitoshi; Onoda, Shinobu; Isoya, Junichi; Wrachtrup, JörgDiamond quantum sensors are sensitive to weak microwave magnetic fields resonant to the spin transitions. However, the spectral resolution in such protocols is ultimately limited by the sensor lifetime. Here, we demonstrate a heterodyne detection method for microwaves (MW) leading to a lifetime independent spectral resolution in the GHz range. We reference the MW signal to a local oscillator by generating the initial superposition state from a coherent source. Experimentally, we achieve a spectral resolution below 1 Hz for a 4 GHz signal far below the sensor lifetime limit of kilohertz. Furthermore, we show control over the interaction of the MW-field with the two-level system by applying dressing fields, pulsed Mollow absorption and Floquet dynamics under strong longitudinal radio frequency drive. While pulsed Mollow absorption leads to improved sensitivity, the Floquet dynamics allow robust control, independent from the system’s resonance frequency. Our work is important for future studies in sensing weak microwave signals in a wide frequency range with high spectral resolution.Item Open Access High space‐bandwidth‐product (SBP) hologram carriers toward photorealistic 3D holography(2024) Li, Jin; Li, Xiaoxun; Huang, Xiangyu; Kaissner, Robin; Neubrech, Frank; Sun, Shuo; Liu, Na3D holography capable of reproducing all necessary visual cues is considered the most promising route to present photorealistic 3D images. Three elements involving computer‐generated hologram (CGH) algorithms, hologram carriers, and optical systems are prerequisites to create high‐quality holographic displays for photorealistic 3D holography. Especially, the hologram carrier directly determines the holographic display capability and the design of high space‐bandwidth‐product (SBP) optical systems. Currently, two categories of hologram carriers, i.e., spatial light modulators (SLM) and metasurfaces, are regarded as promising candidates for photorealistic 3D holography. However, most of their SBP capability still cannot match the amount of information generated by the CGH. To address this issue, tremendous efforts are made to improve the capability of hologram carriers. Here, the main hologram carriers (from SLM to metasurfaces) that are widely utilized in holography systems to achieve high SBP capability (high resolution, wide viewing angles, and large sizes) are reviewed. The purpose of this review is to identify the key challenges and future directions of SLM‐based and metasurface‐based holography for photorealistic 3D holographic images.