Universität Stuttgart
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Item Open Access Energy gap reduction in superconducting tin films by quasiparticle injection(1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, WolfgangIn Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.Item Open Access Reflection of high-frequency phonons at silicon-solid interfaces(1981) Marx, Dieter; Eisenmenger, WolfgangIn reflection experiments with phonons of frequencies above 280 GHz propagating along (110) directions we observed large deviations from the acoustic mismatch theory for silicon-metal, silicon-condensed gas, and silicon-liquid helium interfaces.Item Open Access Epitaxy and scanning tunneling microscopy image contrast of copper-phthalocyanine on graphite and MoS2(1994) Ludwig, Christoph; Strohmaier, Rainer; Petersen, Jörg; Gompf, Bruno; Eisenmenger, WolfgangMonolayers of copper–phthalocyanine (Cu–Pc) on highly oriented pyrolytic graphite (HOPG) and MoS2 prepared by organic molecular beam epitaxy have been investigated by scanning tunneling microscopy. On both substrates there exist well defined preparation conditions leading to ordered two-dimensional arrays of flat lying molecules. On HOPG they form a close-packed structure with a nearly quadratic unit cell, whereas on MoS2 we found two phases, one close-packed and one rowlike phase. This rowlike phase can be explained by a long range interaction due to an adsorbate induced superstructure of the substrate, which also can be seen in the scanning tunneling microscopy images. In images with submolecular resolution, the molecules appear different on the two substrates. On MoS2 they look like a four-leaved clover, on graphite they show a more detailed inner structure.Item Open Access Dynamics of poling PVDF between 25°C and 120°C(1991) Eberle, Gernot; Eisenmenger, WolfgangPVDF films with high β-content are poled in an electric field of 60 MV/m at temperatures between 25°C and 120°C. At 25°C the alignment of dipoles takes place in a central poling zone during several hours of poling. When the temperature is increased to 120°C the poling time necessary to align the dipoles in this narrow zone is reduced to several seconds. In addition, at temperatures higher than 90°C and increased poling times the central poling zone first increases but later decreases in its dielectric displacement. Simultaneously in a 10 μm regime adjoining the positive electrode a secondary displacement zone starts to grow. The strong reduction of this peak under short circuit conditions indicates hetero-charge accumulation in front of an anode.Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access Continuous high resolution phonon spectroscopy up to 12meV : measurement of the A+ binding energies in silicon(1986) Burger, Wilfried; Lassmann, KurtWe have measured the binding energies of Ga+, Al+, and In+ centers in silicon with energy-resolved phonon-induced electrical conductivity. For Ga+ and Al+ we obtain the value of about 2 meV as earlier found for B+, whereas the binding energy of In+ is 6 meV. Spectral structures attributed to impurity interactions found for higher concentrations of In at energies up to about 12 meV demonstrate that acoustic phonons up to this energy are transmitted from the tunnel junction to the substrate.Item Open Access Diffusive scattering of high-frequency phonons at free silicon surfaces(1983) Marx, Dieter; Eisenmenger, WolfgangComparing measurements of high-frequency phonon reflection at the uncovered and optically polished (100)-silicon surface, with calculations considering phonon focusing, reveal complete diffusive scattering with at most 4% specular reflection contribution. Two possible mechanisms causing diffusive scattering are discussed.Item Open Access Experimental results on absolute phonon detection sensitivity of superconducting tunneling junctions(1972) Trumpp, Hans-Joachim; Epperlein, Peter W.; Lassmann, KurtSuperconducting tin tunnelling junctions are used for generating and detecting 300 GHz phonons. The absolute phonon detection sensitivity can be obtained, making possible a comparison of the number of phonons detected to the number of phonons generated. This, together with measurements of the dependence of junction time constant on its thickness, gives an indication that far more phonons are radiated into liquid He than is expected from a simple acoustic model.Item Open Access Phonon detection by the fountain pressure in superfluid 4Helium films(1980) Eisenmenger, WolfgangThe importance of phonon focussing was first demonstrated by Taylor, Maris and Elbaum, who calculated the phonon intensities or different modes in single crystals from the detailed form of the angle or k-dependent sound velocity surfaces. The results of these calculations are well-confirmed by experiment. It is quite surprising that phonon focussing leads in several crystals to very narrow beams of phonon energy propagation especially for transverse modes, as recently calculated by Rosch and Weis, who presented their computer results in a very instructive form. From these theoretical results it appears worthwhile to devise methods by which the intensity distribution of incoherent phonons propagating in single crystals can be measured in detail or directly imaged.Item Open Access Reflection of high frequency phonons at free silicon surfaces(1978) Marx, Dieter; Buck, Jochen; Lassmann, Kurt; Eisenmenger, WolfgangIn reflection experiments at free silicon [100]-surfaces we could distinguish between specularly and diffusely reflected transverse phonons propagated along <100>-directions. With increasing phonon frequency the number of diffusely scattered phonons increase relative to that of specularly reflected phonons.