Universität Stuttgart
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Item Open Access Phase errors in high line density CGH used for aspheric testing : beyond scalar approximation(2013) Peterhänsel, Sandy; Pruss, Christof; Osten, WolfgangOne common way to measure asphere and freeform surfaces is the interferometric Null test, where a computer generated hologram (CGH) is placed in the object path of the interferometer. If undetected phase errors are present in the CGH, the measurement will show systematic errors. Therefore the absolute phase of this element has to be known. This phase is often calculated using scalar diffraction theory. In this paper we discuss the limitations of this theory for the prediction of the absolute phase generated by different implementations of CGH. Furthermore, for regions where scalar approximation is no longer valid, rigorous simulations are performed to identify phase sensitive structure parameters and evaluate fabrication tolerances for typical gratings.Item Open Access Integrated optoelectronic devices using lab‐on‐fiber technology(2022) Ricciardi, Armando; Zimmer, Michael; Witz, Norbert; Micco, Alberto; Piccirillo, Federica; Giaquinto, Martino; Kaschel, Mathias; Burghartz, Joachim; Jetter, Michael; Michler, Peter; Cusano, Andrea; Portalupi, Simone LucaSilica fibers are nowadays cornerstones in several technological implementations from long‐distance communication, to sensing applications in many scenarios. To further enlarge the functionalities, the compactness, and the performances of fiber‐based devices, one needs to reliably integrate small‐footprint components such as sensors, light sources, and detectors onto single optical fiber substrates. Here, a novel proof of concept is presented to deterministically integrate optoelectronic chips onto the facet of an optical fiber, further implementing the electrical contacting between the chip and fiber itself. The CMOS‐compatible procedure is based on a suitable combination of metal deposition, laser machining, and micromanipulation, directly applied onto the fiber tip. The proposed method is validated by transferring, aligning, and bonding a quantum‐well based laser on the core of a multimode optical fiber. The successful monolithic device integration on fiber shows simultaneously electrical contacting between the laser and the ferrule, and 20% light in‐coupling in the fiber. These results pave new ways to develop the next generation of optoelectronic systems on fiber. The technological approach will set a new relevant milestone along the lab‐on‐fiber roadmap, opening new avenues for a novel class of integrated optoelectronic fiber platforms, featuring unrivaled miniaturization, compactness, and performances levels, designed for specific applications.Item Open Access Pulsed laser porosification of silicon thin films(2016) Sämann, Christian; Köhler, Jürgen R.; Dahlinger, Morris; Schubert, Markus B.; Werner, Jürgen H.Item Open Access Micro- and nanofabrication of dynamic hydrogels with multichannel information(2023) Zhang, Mingchao; Lee, Yohan; Zheng, Zhiqiang; Khan, Muhammad Turab Ali; Lyu, Xianglong; Byun, Junghwan; Giessen, Harald; Sitti, MetinCreating micro/nanostructures containing multi-channel information within responsive hydrogels presents exciting opportunities for dynamically changing functionalities. However, fabricating these structures is immensely challenging due to the soft and dynamic nature of hydrogels, often resulting in unintended structural deformations or destruction. Here, we demonstrate that dehydrated hydrogels, treated by a programmable femtosecond laser, can allow for a robust fabrication of micro/nanostructures. The dehydration enhances the rigidity of the hydrogels and temporarily locks the dynamic behaviours, significantly promoting their structural integrity during the fabrication process. By utilizing versatile dosage domains of the femtosecond laser, we create micro-grooves on the hydrogel surface through the use of a high-dosage mode, while also altering the fluorescent intensity within the rest of the non-ablated areas via a low-dosage laser. In this way, we rationally design a pixel unit containing three-channel information: structural color, polarization state, and fluorescent intensity, and encode three complex image information sets into these channels. Distinct images at the same location were simultaneously printed onto the hydrogel, which can be observed individually under different imaging modes without cross-talk. Notably, the recovered dynamic responsiveness of the hydrogel enables a multi-information-encoded surface that can sequentially display different information as the temperature changes.Item Open Access Observation of ultrafast interfacial Meitner-Auger energy transfer in a Van der Waals heterostructure(2023) Dong, Shuo; Beaulieu, Samuel; Selig, Malte; Rosenzweig, Philipp; Christiansen, Dominik; Pincelli, Tommaso; Dendzik, Maciej; Ziegler, Jonas D.; Maklar, Julian; Xian, R. Patrick; Neef, Alexander; Mohammed, Avaise; Schulz, Armin; Stadler, Mona; Jetter, Michael; Michler, Peter; Taniguchi, Takashi; Watanabe, Kenji; Takagi, Hidenori; Starke, Ulrich; Chernikov, Alexey; Wolf, Martin; Nakamura, Hiro; Knorr, Andreas; Rettig, Laurenz; Ernstorfer, RalphAtomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe2/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe2. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.Item Open Access Focused surface plasmon polaritons coherently couple to electronic states in above-threshold electron emission(2023) Dreher, Pascal; Janoschka, David; Frank, Bettina; Giessen, Harald; Meyer zu Heringdorf, Frank-J.When an intense light field strongly interacts with the band structure of a solid, the formation of hybrid light-matter quantum states becomes possible. Examples of such Floquet-Bloch states have been reported, but engineering of the band structure using Floquet states can suffer from dissipation and decoherence. Sustaining the necessary quantum coherence of the light-matter interactions requires robust electronic states in combination with strong fields of suitable polarization and frequency. Here, we explore the quantum coherent coupling of nano-focused surface plasmon polaritons (SPP) to distinct electronic states in the band structure of a solid. We observe above-threshold electron emission from the Au(111) Shockley surface state by the absorption of up to seven SPP quanta. Using time-resolved photoelectron spectroscopy the coherence of the interaction of the SPPs with the surface state during electron emission is investigated and the process is shown to be similar to light-driven above threshold electron emission. Ultimately, our work could render SPP-based Floquet engineering in nano-optical systems feasible.Item Open Access Optical charge injection and coherent control of a quantum-dot spin-qubit emitting at telecom wavelengths(2022) Dusanowski, Łukasz; Nawrath, Cornelius; Portalupi, Simone L.; Jetter, Michael; Huber, Tobias; Klembt, Sebastian; Michler, Peter; Höfling, SvenSolid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement an optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole injection, initialization, read-out and complete coherent control using picosecond optical pulses. These results showcase a solid-state spin-qubit platform compatible with preexisting optical fiber networks.Item Open Access High-rate intercity quantum key distribution with a semiconductor single-photon source(2024) Yang, Jingzhong; Jiang, Zenghui; Benthin, Frederik; Hanel, Joscha; Fandrich, Tom; Joos, Raphael; Bauer, Stephanie; Kolatschek, Sascha; Hreibi, Ali; Rugeramigabo, Eddy Patrick; Jetter, Michael; Portalupi, Simone Luca; Zopf, Michael; Michler, Peter; Kück, Stefan; Ding, FeiQuantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 × 10 -5 with an average quantum bit error ratio of ~ 0.65% are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications.Item Open Access Solar cells with laser doped boron layers from atmospheric pressure chemical vapor deposition(2022) Zapf-Gottwick, Renate; Seren, Sven; Fernandez-Robledo, Susana; Wete, Evariste-Pasky; Schiliro, Matteo; Hassan, Mohamed; Mihailetchi, Valentin; Buck, Thomas; Kopecek, Radovan; Köhler, Jürgen; Werner, Jürgen H.We present laser-doped interdigitated back contact (IBC) solar cells with efficiencies of 23% on an area of 244 cm2 metallized by a screen-printed silver paste. Local laser doping is especially suited for processing IBC cells where a multitude of pn-junctions and base contacts lay side by side. The one-sided deposition of boron-doped precursor layers by atmospheric pressure chemical vapor deposition (APCVD) is a cost-effective method for the production of IBC cells without masking processes. The properties of the laser-doped silicon strongly depend on the precursor’s purity, thickness, and the total amount of boron dopants. Variations of the precursor in terms of thickness and boron content, and of the laser pulse energy density, can help to tailor the doping and sheet resistance. With saturation-current densities of 70 fA/cm2 at sheet resistances of 60 Ohm/sq, we reached maximum efficiencies of 23% with a relatively simple, industrial process for bifacial IBC-cells, with 70% bifaciality measured on the module level. The APCVD-layers were deposited with an inline lab-type system and a metal transport belt and, therefore, may have been slightly contaminated, limiting the efficiencies when compared to thermal-diffused boron doping. The use of an industrial APCVD system with a quartz glass transport system would achieve even higher efficiencies.Item Open Access Machine learning enhanced evaluation of semiconductor quantum dots(2024) Corcione, Emilio; Jakob, Fabian; Wagner, Lukas; Joos, Raphael; Bisquerra, Andre; Schmidt, Marcel; Wieck, Andreas D.; Ludwig, Arne; Jetter, Michael; Portalupi, Simone L.; Michler, Peter; Tarín, CristinaA key challenge in quantum photonics today is the efficient and on-demand generation of high-quality single photons and entangled photon pairs. In this regard, one of the most promising types of emitters are semiconductor quantum dots, fluorescent nanostructures also described as artificial atoms. The main technological challenge in upscaling to an industrial level is the typically random spatial and spectral distribution in their growth. Furthermore, depending on the intended application, different requirements are imposed on a quantum dot, which are reflected in its spectral properties. Given that an in-depth suitability analysis is lengthy and costly, it is common practice to pre-select promising candidate quantum dots using their emission spectrum. Currently, this is done by hand. Therefore, to automate and expedite this process, in this paper, we propose a data-driven machine-learning-based method of evaluating the applicability of a semiconductor quantum dot as single photon source. For this, first, a minimally redundant, but maximally relevant feature representation for quantum dot emission spectra is derived by combining conventional spectral analysis with an autoencoding convolutional neural network. The obtained feature vector is subsequently used as input to a neural network regression model, which is specifically designed to not only return a rating score, gauging the technical suitability of a quantum dot, but also a measure of confidence for its evaluation. For training and testing, a large dataset of self-assembled InAs/GaAs semiconductor quantum dot emission spectra is used, partially labelled by a team of experts in the field. Overall, highly convincing results are achieved, as quantum dots are reliably evaluated correctly. Note, that the presented methodology can account for different spectral requirements and is applicable regardless of the underlying photonic structure, fabrication method and material composition. We therefore consider it the first step towards a fully integrated evaluation framework for quantum dots, proving the use of machine learning beneficial in the advancement of future quantum technologies.