Universität Stuttgart
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Item Open Access 10 Gbit/s monolithic integrated Msm-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim-Item Open Access 1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs(1994) Hurm, Volker; Benz, Willi; Berroth, Manfred; Fink, Thomas; Fritzsche, Daniel; Haupt, Michael; Hofmann, Peter; Köhler, Klaus; Ludwig, Manfred; Mause, Klaus; Raynor, Brian; Rosenzweig, JosefThe first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.Item Open Access Indirect optically controlled pseudomorphic HEMT based MMIC oscillator(1992) Bangert, Axel; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Hurm, Volker; Kaufel, Gudrun; Köhler, Klaus; Rosenzweig, Josef; Schneider, JoachimFor the first time an indirect optically controlled monolithic integrated oscillator was fabricated and examined experimentally. The oscillator was designed for a frequency of about 7 GHz. By illuminating a 60x60 μm2 photodiode by the light of a pigtailed laser diode (λ=840 nm), the free-running frequency of the oscillator was tunable in a range of more than 7 MHz. A locking range of more than 3 MHz was achieved. A phase shift in the output signal of nearly 180° has been observed.Item Open Access Digital dynamic frequency dividers for broad band application up to 60 GHz(1993) Thiede, Andreas; Berroth, Manfred; Tasker, Paul; Schlechtweg, Michael; Seibel, Jörg; Raynor, Brian; Hülsmann, Axel; Köhler, Klaus; Bronner, WolfgangA broadband dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.Item Open Access 10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links(1992) Berroth, Manfred; Hurm, Volker; Lang, Manfred; Ludwig, Manfred; Nowotny, Ulrich; Wang, Zhigong; Wennekers, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.Item Open Access 20 Gb/s monolithic integrated clock recovery and data decision(1994) Wang, Zhigong; Berroth, Manfred; Hurm, Volker; Lang, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn IC for 20 Gb/s clock recovery and data decision was realised using 0.3 m gate-length QW-HEMTs. A narrow-band regenerative frequency divider with on-chip resonator filters is used for the clock recovery. The parallel processing concept is accepted for the data decision. The complex IC was tested on wafer using 5 and 10-Gb/s input data. The desired 10-GHz clock signal and regenerated data signals have been obtained. The 2x2 mm 2 IC has a power consumption of about 0.5 W at -3 volt supply voltage.Item Open Access Modelling and realization of a monolithic 27 GHz HEMT amplifier in coplanar waveguide technology(1990) Bischof, Werner; Ehrlinger, Wolfgang; Berroth, Manfred; Reinert, WernerA monolithic integrated amplifier in HFET-Technology for the 27 GHz band is presented, fitted for the use in digital radio link front ends with dedicated in- and out-of-band specifications. The amplifier consists of two stages of 0.5 μm HFETs and some passive circuitry for matching, biasing and gain stabilizing. Coplanar waveguides and lumped elements like thinfilm resistors, MIM-capacitors and spiral inductors were used. All passiv and active components were measured separately and the derived circuit models were placed into a CAD-library.Item Open Access High frequency equivalent circuit of GaAs depletion and enhancement FETs for large signal modelling(1990) Berroth, Manfred; Bosch, RolandFor the design of digital circuits as well as for power amplifiers, the nonlinear modelling of GaAs FETs is a necessity. We use an extended equivalent circuit, which takes into account the gate current of positive biased transistors as well as the symmetrical nature of the devices at low drain voltages. A fast method to determine the elements of the equivalent circuit from measured S-parameters is presented which delivers for the first time good agreement for all operating points. A valid large signal description of the device can be obtained by implementing the bias dependences of the intrinsic elements into a circuit simulator like SPICE.Item Open Access 19 GHz monolithic integrated clock recovery using PLL and 0.3 μm gate-length quantum-well HEMTs(1994) Wang, Zhigong; Berroth, Manfred; Seibel, Jörg; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimICs for optical data links have been developed for bit rates between 10 and 200 Gb/s. The only exception was the clock recovery (CR) IC at these high bit rates. In fact, the IC realization of CR is generally accepted as the weak point of high-speed system integration. While the bit rates of some ICs reach up to 40 Gb/s, monolithic ICs for a full CR function are limited to 2.5 Gb/s. The monolithic IC described here, for CR with a PLL including a full-balanced VCO, is based on the IC reported by Wang et. al. (1993). Clock frequencies up to 19 GHz are recovered with the IC reported here.Item Open Access A monolithic HEMT-amplifier with feedback in coplanar waveguide technology(1992) Bischof, Werner; Ehrlinger, Wolfgang; Berroth, Manfred; Reinert, WernerA monolithic integrated wide-band amplifier is presented, which consists of two 0.3 μm HEMT-stages in GaAs/GaAlAs-Technology. The main signal path consists of a coplanar waveguide, which interfaces conveniently to the HEMT-cells. A feedback circuit with R, L and C connects gate and drain. To close the feedback loop small scale microstrip lines were combined with CPW /1, 2, 4/. Matching is done with a LC circuit at the gate and a combination of transmission line and capacitor at the drain. In addition there are some other passive elements for biasing, which reduce external components to a minimum. All element models were checked with measured data and placed into a CAD-library for easy use in the design process.