1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
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Date
1994
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Abstract
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.