Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4888
|Authors:||Goer, Anne M. de|
|Title:||A study of the ground state of acceptors in silicon from thermal transport experiments|
|metadata.ubs.publikation.source:||Journal de physique 42 (1981), C6, S. 235-237|
|Abstract:||Thermal conductivity measurements of silicon crystals doped with Bor In have shown the presence of several phonon scattering processes. The resonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Γ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In two cases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement with previous ultrasonic studies.|
|Appears in Collections:||08 Fakultät Mathematik und Physik|
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