Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4893
Authors: Köpf, Andreas
Ambrosy, Anton
Lassmann, Kurt
Title: Linear stark coupling to the ground state of effective mass acceptors
Issue Date: 1989
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.publikation.source: Monemar, Bo (Hrsg.): Shallow impurities in semiconductors 1988 : proceedings of the Third International Conference held in Linköping, Sweden, 10 - 12 August 1988. Bristol : Institute of Physics, 1989 (Conference series / Institute of Physics, 95), S. 131-136
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47176
http://elib.uni-stuttgart.de/handle/11682/4910
http://dx.doi.org/10.18419/opus-4893
Abstract: It is shown by dielectric resonance absorption at 24 GHz and by ultrasonic resonance spectroscopy between 5 and 10 GHz that linear coupling of the electric field to the ground state of effective mass acceptors in Si exists and has a distinct chemical shift from B to In.
Appears in Collections:08 Fakultät Mathematik und Physik

Files in This Item:
File Description SizeFormat 
las37.pdf269,98 kBAdobe PDFView/Open


Items in OPUS are protected by copyright, with all rights reserved, unless otherwise indicated.