Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4895
Authors: Groß, Peter
Lassmann, Kurt
Title: Investigation of A+-states in Si and Ge by phonon-induced conduction under uniaxial stress
Issue Date: 1993
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.publikation.source: Meissner, Michael (Hrsg.): Proceedings of the Seventh International Conference on Phonon Scattering in Condensed Matter : Cornell University, Ithaca, New York, August 3-7, 1992. Berlin : Springer, 1993 (Springer series in solid-state sciences 12), S. 125-126
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47214
http://elib.uni-stuttgart.de/handle/11682/4912
http://dx.doi.org/10.18419/opus-4895
Abstract: By the analysis of the stress dependence of phonon induced conductivity (PIC) with superconducting Al-tunneling junctions as phonon generators we have now found strong evidence for a split ground state in the cases Si:Ga+, Si:Al+ and Ge:Zn+.
Appears in Collections:08 Fakultät Mathematik und Physik

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