Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4902
|Title:||Dependence of the phonoionization of A+-states in Si on uniaxial pressure|
|metadata.ubs.publikation.source:||Japanese journal of applied physics 26 (1987), Suppl. 3, S. 673-674. URL http://dx.doi.org/10.7567/JJAPS.26S3.673|
|Abstract:||By the new technique of phonon induced conductance we have investigated the dependence on pressure of the phonoionization response of shallow A+-states in Si with superconducting Al-junctions as monochromatic phonon generators. In the case of B+ and Al+ we obtain a much more complicated behaviour than previously found for B+ with FIR-photoconductivity which may be connected with differences in coupling for short wavelength phonons. In the case of in+ on the other hand a shift to lower energies is observed for uniaxial pressure in -direction whereas for pressure in -direction only the signal intensity varies but not the position of the threshold.|
|Appears in Collections:||08 Fakultät Mathematik und Physik|
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