Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4902
Authors: Groß, Peter
Gienger, Martin
Lassmann, Kurt
Title: Dependence of the phonoionization of A+-states in Si on uniaxial pressure
Issue Date: 1987
metadata.ubs.publikation.typ: Zeitschriftenartikel
metadata.ubs.publikation.source: Japanese journal of applied physics 26 (1987), Suppl. 3, S. 673-674. URL http://dx.doi.org/10.7567/JJAPS.26S3.673
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47159
http://elib.uni-stuttgart.de/handle/11682/4919
http://dx.doi.org/10.18419/opus-4902
Abstract: By the new technique of phonon induced conductance we have investigated the dependence on pressure of the phonoionization response of shallow A+-states in Si with superconducting Al-junctions as monochromatic phonon generators. In the case of B+ and Al+ we obtain a much more complicated behaviour than previously found for B+ with FIR-photoconductivity which may be connected with differences in coupling for short wavelength phonons. In the case of in+ on the other hand a shift to lower energies is observed for uniaxial pressure in [100]-direction whereas for pressure in [111]-direction only the signal intensity varies but not the position of the threshold.
Appears in Collections:08 Fakultät Mathematik und Physik

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