Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-8434
Authors: Wolfstädter, Bernd
Trebin, Hans-Rainer
Pascher, Harald
Häfele, Hans-Georg
Title: Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Issue Date: 1988
metadata.ubs.publikation.typ: Zeitschriftenartikel
metadata.ubs.publikation.source: Physical review, B 37 (1988), S. 10264-10268. URL http://dx.doi.org./10.1103/PhysRevB.37.10256
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-104793
http://elib.uni-stuttgart.de/handle/11682/8451
http://dx.doi.org/10.18419/opus-8434
Abstract: In a series of four papers magnetooptical transitions are presented for InSb crystals, which are subjected to uniaxial stress perpendicular to the magnetic field. Here, in the first paper, we establish an 8×8 k⋅p Hamiltonian matrix for stress Tǁ[100] and field Bǁ[001] and diagonalize it exactly. The dependence of valence and conduction states on stress and longitudinal momentum is discussed and compared with the geometry of parallel fields TǁBǁ[001]. Characteristic features are extracted for inter- and intraband transitions. Under crossed fields, the levels are separated much stronger with stress, yielding more insight than in the parallel configuration.
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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