Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-8434
|Title:||Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands|
|metadata.ubs.publikation.source:||Physical review, B 37 (1988), S. 10264-10268. URL http://dx.doi.org./10.1103/PhysRevB.37.10256|
|Abstract:||In a series of four papers magnetooptical transitions are presented for InSb crystals, which are subjected to uniaxial stress perpendicular to the magnetic field. Here, in the first paper, we establish an 8×8 k⋅p Hamiltonian matrix for stress Tǁ and field Bǁ and diagonalize it exactly. The dependence of valence and conduction states on stress and longitudinal momentum is discussed and compared with the geometry of parallel fields TǁBǁ. Characteristic features are extracted for inter- and intraband transitions. Under crossed fields, the levels are separated much stronger with stress, yielding more insight than in the parallel configuration.|
|Appears in Collections:||15 Fakultätsübergreifend / Sonstige Einrichtung|
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