08 Fakultät Mathematik und Physik
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Item Open Access Energy gap reduction in superconducting tin films by quasiparticle injection(1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, WolfgangIn Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.Item Open Access Reflection of high-frequency phonons at silicon-solid interfaces(1981) Marx, Dieter; Eisenmenger, WolfgangIn reflection experiments with phonons of frequencies above 280 GHz propagating along (110) directions we observed large deviations from the acoustic mismatch theory for silicon-metal, silicon-condensed gas, and silicon-liquid helium interfaces.Item Open Access Epitaxy and scanning tunneling microscopy image contrast of copper-phthalocyanine on graphite and MoS2(1994) Ludwig, Christoph; Strohmaier, Rainer; Petersen, Jörg; Gompf, Bruno; Eisenmenger, WolfgangMonolayers of copper–phthalocyanine (Cu–Pc) on highly oriented pyrolytic graphite (HOPG) and MoS2 prepared by organic molecular beam epitaxy have been investigated by scanning tunneling microscopy. On both substrates there exist well defined preparation conditions leading to ordered two-dimensional arrays of flat lying molecules. On HOPG they form a close-packed structure with a nearly quadratic unit cell, whereas on MoS2 we found two phases, one close-packed and one rowlike phase. This rowlike phase can be explained by a long range interaction due to an adsorbate induced superstructure of the substrate, which also can be seen in the scanning tunneling microscopy images. In images with submolecular resolution, the molecules appear different on the two substrates. On MoS2 they look like a four-leaved clover, on graphite they show a more detailed inner structure.Item Open Access Dynamics of poling PVDF between 25°C and 120°C(1991) Eberle, Gernot; Eisenmenger, WolfgangPVDF films with high β-content are poled in an electric field of 60 MV/m at temperatures between 25°C and 120°C. At 25°C the alignment of dipoles takes place in a central poling zone during several hours of poling. When the temperature is increased to 120°C the poling time necessary to align the dipoles in this narrow zone is reduced to several seconds. In addition, at temperatures higher than 90°C and increased poling times the central poling zone first increases but later decreases in its dielectric displacement. Simultaneously in a 10 μm regime adjoining the positive electrode a secondary displacement zone starts to grow. The strong reduction of this peak under short circuit conditions indicates hetero-charge accumulation in front of an anode.Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access Diffusive scattering of high-frequency phonons at free silicon surfaces(1983) Marx, Dieter; Eisenmenger, WolfgangComparing measurements of high-frequency phonon reflection at the uncovered and optically polished (100)-silicon surface, with calculations considering phonon focusing, reveal complete diffusive scattering with at most 4% specular reflection contribution. Two possible mechanisms causing diffusive scattering are discussed.Item Open Access Phonon detection by the fountain pressure in superfluid 4Helium films(1980) Eisenmenger, WolfgangThe importance of phonon focussing was first demonstrated by Taylor, Maris and Elbaum, who calculated the phonon intensities or different modes in single crystals from the detailed form of the angle or k-dependent sound velocity surfaces. The results of these calculations are well-confirmed by experiment. It is quite surprising that phonon focussing leads in several crystals to very narrow beams of phonon energy propagation especially for transverse modes, as recently calculated by Rosch and Weis, who presented their computer results in a very instructive form. From these theoretical results it appears worthwhile to devise methods by which the intensity distribution of incoherent phonons propagating in single crystals can be measured in detail or directly imaged.Item Open Access Measurements of effective quasiparticle recombination times and of densities of electronic states at the Fermi level in superconducting Al- and Pb-films(1979) Epperlein, Peter W.; Eisenmenger, WolfgangTemperature-dependent quasiparticle recombination lifetimes tau exp (T) and densities N 0 of electronic states at the Fermi level have been measured from time decay experiments of excess quasiparticle concentrations in evaporated, superconducting Al- and Pb-tunnel junctions. Current pulses were used to inject excess, nonthermal quasiparticles in a single junction acting simultaneously as generator and detector. The experimental lifetimes in "unperturbed" Al show satisfactory agreement with calculations based on the 2Delta-phonon trapping lifetime model. Tau exp decreases with increasing perturbations of the Al film structure by oxygen background evaporation. In Pb the measured times indicate 2Delta-phonon volume losses. The densities N 0 in Pb-films and "unperturbed" as well as oxygen-perturbed Al-films differ by less than 5% from the corresponding bulk material data. Therefore, in trying to explain the enhancement of the transition temperature from 1.23 K to 1.85 K in perturbed, granular Al-films a change of N 0 can be ruled out.Item Open Access Reflection of high frequency phonons at free silicon surfaces(1978) Marx, Dieter; Buck, Jochen; Lassmann, Kurt; Eisenmenger, WolfgangIn reflection experiments at free silicon [100]-surfaces we could distinguish between specularly and diffusely reflected transverse phonons propagated along <100>-directions. With increasing phonon frequency the number of diffusely scattered phonons increase relative to that of specularly reflected phonons.Item Open Access Field induced gas emission of polymer films(1992) Selle, Michael; Eberle, Gernot; Gompf, Bruno; Eisenmenger, WolfgangPoling polyvinylidene fluoride under vacuum conditions causes strong gas emission, which is analyzed with a quadrupole mass spectrometer. The dominant peak in the mass spectrum is HF, which is produced by electrochemical reactions at the sample surface. After the electric field is switched off, the gas emission unexpectedly increases to a value higher than under the field. This can be explained by ionic charge detrappingand charge migration