08 Fakultät Mathematik und Physik
Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/9
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Item Open Access Energy gap reduction in superconducting tin films by quasiparticle injection(1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, WolfgangIn Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.Item Open Access Reflection of high-frequency phonons at silicon-solid interfaces(1981) Marx, Dieter; Eisenmenger, WolfgangIn reflection experiments with phonons of frequencies above 280 GHz propagating along (110) directions we observed large deviations from the acoustic mismatch theory for silicon-metal, silicon-condensed gas, and silicon-liquid helium interfaces.Item Open Access Epitaxy and scanning tunneling microscopy image contrast of copper-phthalocyanine on graphite and MoS2(1994) Ludwig, Christoph; Strohmaier, Rainer; Petersen, Jörg; Gompf, Bruno; Eisenmenger, WolfgangMonolayers of copper–phthalocyanine (Cu–Pc) on highly oriented pyrolytic graphite (HOPG) and MoS2 prepared by organic molecular beam epitaxy have been investigated by scanning tunneling microscopy. On both substrates there exist well defined preparation conditions leading to ordered two-dimensional arrays of flat lying molecules. On HOPG they form a close-packed structure with a nearly quadratic unit cell, whereas on MoS2 we found two phases, one close-packed and one rowlike phase. This rowlike phase can be explained by a long range interaction due to an adsorbate induced superstructure of the substrate, which also can be seen in the scanning tunneling microscopy images. In images with submolecular resolution, the molecules appear different on the two substrates. On MoS2 they look like a four-leaved clover, on graphite they show a more detailed inner structure.Item Open Access Dynamics of poling PVDF between 25°C and 120°C(1991) Eberle, Gernot; Eisenmenger, WolfgangPVDF films with high β-content are poled in an electric field of 60 MV/m at temperatures between 25°C and 120°C. At 25°C the alignment of dipoles takes place in a central poling zone during several hours of poling. When the temperature is increased to 120°C the poling time necessary to align the dipoles in this narrow zone is reduced to several seconds. In addition, at temperatures higher than 90°C and increased poling times the central poling zone first increases but later decreases in its dielectric displacement. Simultaneously in a 10 μm regime adjoining the positive electrode a secondary displacement zone starts to grow. The strong reduction of this peak under short circuit conditions indicates hetero-charge accumulation in front of an anode.Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access TRSS: a new version of program TRS for a different geometry(1992) Schmitz, Joachim; Trebin, Hans-Rainer; Rössler, UlrichQuantum resonances in the bands of semiconductors under uniaxial stress provide very detailed information on the band parameters. However, the analysis of experimental data is difficult. Computer programs based on an adequate theoretical model make this task easier. Program TRSS calculates energy eigenvalues, wave functions and oscillator strengths for direct inter- and intraband dipole transitions. The magnetic field is applied parallel to the [001] crystal axis while the uniaxial stress is directed perpendicular [100] to it.Item Open Access Liquid-crystalline blue phase III and structures of broken icosahedral symmetry(1993) Longa, Lech; Fink, Werner; Trebin, Hans-RainerThe structure of the liquid-crystalline blue phase III (BPIII) is still unknown and remains one of the mysteries of liquid-crystal physics. We take all icosahedral space-group symmetries of the reciprocal space for BPIII and study their thermodynamic stability within the frame of an extended de Gennes–Ginzburg–Landau free-energy expansion. The stability of the icosahedral structures is compared with that of the cholesteric phase and of the cubic blue phases. Strikingly, even though the extended model contains three extra parameters, we could not detect a region of parameter space where icosahedral structures are absolutely stable just below the isotropic phase.Item Open Access Continuous high resolution phonon spectroscopy up to 12meV : measurement of the A+ binding energies in silicon(1986) Burger, Wilfried; Lassmann, KurtWe have measured the binding energies of Ga+, Al+, and In+ centers in silicon with energy-resolved phonon-induced electrical conductivity. For Ga+ and Al+ we obtain the value of about 2 meV as earlier found for B+, whereas the binding energy of In+ is 6 meV. Spectral structures attributed to impurity interactions found for higher concentrations of In at energies up to about 12 meV demonstrate that acoustic phonons up to this energy are transmitted from the tunnel junction to the substrate.Item Open Access Makroskopische Quasikristalle(1990) Kramer, Peter; Trebin, Hans-RainerFünf Jahre ist es her, daß Dan Shechtman (Technion, Haifa) an der Metallegierung Al86Mn14 ein scharfes Elektronenbeugungsmuster mit Ikosaedersymmetrie fand. Weitreichende Ordnung, dokumentiert durch Bragg-Reflexe, und nicht-kristallographische Ikosaedersymmetrie mit fünfzähligen Achsen haben die Strukturphysiker in den Jahren seither veranlaßt, eine Fülle von Modellen für atomare Anordnungen zu entwickeln, die zwischen den periodischen klassischen Kristallen mit Fernordnung und den nur nahgeordneten amorphen Strukturen liegen. Erste Modellvorstellungen von Quasikristallen entnahm man den Penrose-Mustern. Sie bilden in zwei Raumdimensionen eine lückenlose Überdeckung der Ebene mit zwei Arten von Zellen in der Form einer spitzen und einer stumpfen Raute.Item Open Access Diffusive scattering of high-frequency phonons at free silicon surfaces(1983) Marx, Dieter; Eisenmenger, WolfgangComparing measurements of high-frequency phonon reflection at the uncovered and optically polished (100)-silicon surface, with calculations considering phonon focusing, reveal complete diffusive scattering with at most 4% specular reflection contribution. Two possible mechanisms causing diffusive scattering are discussed.