08 Fakultät Mathematik und Physik
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Item Open Access Energy gap reduction in superconducting tin films by quasiparticle injection(1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, WolfgangIn Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.Item Open Access Microscopic calculation of line tensions(2008) Merath, Rolf-Jürgen Christian; Dietrich, Siegfried (Prof. Dr.)In this work the line tension has been determinded with molecular resolution, which in this context marks the forefront of research. A semi-microscopic line tension theory based on the sharp-kink approximation has been further developed. The sharp-kink results concerning wetting and line tension behavior deviate considerably from the fully microscopic results. A hybrid line tension theory has been introduced, which employs an improved effective interface potential for the SK line tension calculation. For most of the studied cases the results from this hybrid method describe the fully microscopic line tension values semi-quantitatively. However, for a tailored system with relatively strong spatial variations of the substrate potential and of the solid-liquid interfacial density the hybrid method fails and does not predict the correct order of magnitude of the line tension values. Hence in general the fully microscopic approach is required, if one is interested in quantitatively reliable line tension values or/and if the validity of the hybrid method for the considered system has not been checked. The calculation of the line tension of a liquid wedge is an important contribution for understanding the shape of very small droplets (below the micrometer range). Furthermore a proposal is given, how axisymmetric sessile droplets can be addressed efficiently within DFT.Item Open Access Reflection of high-frequency phonons at silicon-solid interfaces(1981) Marx, Dieter; Eisenmenger, WolfgangIn reflection experiments with phonons of frequencies above 280 GHz propagating along (110) directions we observed large deviations from the acoustic mismatch theory for silicon-metal, silicon-condensed gas, and silicon-liquid helium interfaces.Item Open Access Epitaxy and scanning tunneling microscopy image contrast of copper-phthalocyanine on graphite and MoS2(1994) Ludwig, Christoph; Strohmaier, Rainer; Petersen, Jörg; Gompf, Bruno; Eisenmenger, WolfgangMonolayers of copper–phthalocyanine (Cu–Pc) on highly oriented pyrolytic graphite (HOPG) and MoS2 prepared by organic molecular beam epitaxy have been investigated by scanning tunneling microscopy. On both substrates there exist well defined preparation conditions leading to ordered two-dimensional arrays of flat lying molecules. On HOPG they form a close-packed structure with a nearly quadratic unit cell, whereas on MoS2 we found two phases, one close-packed and one rowlike phase. This rowlike phase can be explained by a long range interaction due to an adsorbate induced superstructure of the substrate, which also can be seen in the scanning tunneling microscopy images. In images with submolecular resolution, the molecules appear different on the two substrates. On MoS2 they look like a four-leaved clover, on graphite they show a more detailed inner structure.Item Open Access Dynamics of poling PVDF between 25°C and 120°C(1991) Eberle, Gernot; Eisenmenger, WolfgangPVDF films with high β-content are poled in an electric field of 60 MV/m at temperatures between 25°C and 120°C. At 25°C the alignment of dipoles takes place in a central poling zone during several hours of poling. When the temperature is increased to 120°C the poling time necessary to align the dipoles in this narrow zone is reduced to several seconds. In addition, at temperatures higher than 90°C and increased poling times the central poling zone first increases but later decreases in its dielectric displacement. Simultaneously in a 10 μm regime adjoining the positive electrode a secondary displacement zone starts to grow. The strong reduction of this peak under short circuit conditions indicates hetero-charge accumulation in front of an anode.Item Open Access Ambient pressure oxidation of Ag(111) surfaces : an in-situ X-ray study(2008) Reicho, Alexander; Dosch, Helmut (Prof. Dr.)The oxidation of metals plays an outstanding role in everyday life. Typical phenomena are the formation of rust on steel or oxide scales on copper, showing up as a green patina. The formation of metal oxides is not always an unwanted process. The functionality of many materials is directly related to their controlled oxidation. The most prominent examples are passivating oxide layers on stainless steel. Relevant for this thesis are industrially applied heterogeneous catalytic reactions for the synthesis of many chemical products, where gaseous reactants are in contact with the solid surface of the catalyst. Oxidation reactions are very important in this context, leading to a big need of understanding of these processes in research and development. Thereby, the active oxygen species on the surface and selectivity and poisoning of the catalyst have to be studied on an atomic scale. The high temperature and high pressure oxidation of the 4d transition metals Ru, Rh, Pd and Ag is a matter of particular interest, because these metals are widely used as oxidation catalysts. On Ruthenium one observes the formation of RuO2(110) bulk oxide islands at elevated temperatures and oxygen pressure. In the case of the Pd(100) and Rh(111) surface oxidation can lead to the formation of so-called surface oxides. These oxides are structurally related to the bulk oxide of the respective element. Furthermore, surface oxides are ultra thin oxides containing one metallic layer surrounded by two oxygen layers, giving rise to an oxygen-metal-oxygen sequence perpendicular to the surface plane. A future vision is to get a direct microscopic control of the emerging surface structures and ultimately of the real-time oxidation/reduction dynamics allowing one to tailor such catalytic reactions to better performance. A necessary prerequisite to the microscopic control is the full atomistic understanding of the surface structures which form at high temperature and at high oxygen pressures. Silver plays a unique role in heterogeneous catalysis. Supported Ag catalysts are used for the selective oxidation ('epoxidation') of ethylene and for the partial oxidation of methanol to formaldehyde. Ethylene oxide and its derivates are basic chemicals for industry, used in a many technologies with a world-wide production of more than 10 million tons as in medicine for disinfection, sterilization, or fumigation, or in transport and energy technologies for engine antifreeze and heat transfer. Because of its ability to kill most bacteria, formaldehyde is extensively used as disinfectant and as preservative in vaccinations. Therefore, the optimisation of these two Ag-supported catalytic reactions is of paramount importance. Current strategies employed in the industrial process to enhance selectivity include the empirical use of inhibitors (Cl) and promoters (Cs), however, on the way to a knowledge-based control of these reactions one has first to understand the surface structure of oxidized silver under relevant conditions in full detail. The formation of extended Ag(111) facets is observed on polycrystalline silver during the above industrial catalytic oxidation reactions, in turn fundamental research (experiment and theory) has been devoted to the detailed understanding of oxidation of this surface. The formation of an oxygen induced p(4x4) reconstruction on the Ag(111) surface is known since the early 70s. A surface oxide trilayer model, based on a three-layer slab of Ag2O(111), was proposed. Accordingly, the Ag(111) surface seemed to show a similar behaviour like Pd and Rh, being neighbours in the periodic table. Further theoretical calculations predicted the stability of this reconstruction under industrially relevant conditions. Nevertheless, several questions remained unsolved: the stability of the p(4x4) reconstruction under industrially relevant conditions was not checked experimentally, the structural model of the p(4x4) structure was not proven by a crystallographic method and previously unknown structures might play an important role for the catalytic activity of Ag(111) facets. Our experimental approach is based on the nowadays routinely available highly brilliant x-ray radiation produced by third generation synchrotron light sources. This radiation is used by us in three surface sensitive x-ray techniques. In-situ surface x-ray diffraction (SXRD) allows the identification and determination of structural models of surface reconstructions under industrially relevant conditions. This technique is combined with high resolution core level spectroscopy (HRCLS) and normal incidence x-ray standing wave absorption (NIXSW), giving insight into the local binding geometry of the oxygen and silver atoms.Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access Modellierung der Adhäsion und Deformation von Mikrokapseln(2007) Graf, Peter; Seifert, Udo (Prof. Dr.)Mikrokapseln spielen eine wichtige Rolle beim Einschluß und der kontrollierten Freisetzung von Substanzen sowohl in industriellen Anwendungen als auch in der Medizin und den Biowissenschaften. Sie dienen ebenso als Modellsysteme für biologische Objekte wie Zellen oder Viruskapseln. Bei vielen dieser Anwendungen sind gute Kenntnisse über die mechanischen Eigenschaften nötig. Typischerweise wird die Kapsel zu diesem Zweck verformt und die dazu benötigten Kräfte werden gemessen. Die Deformation kann auf verschiedene Arten hervorgerufen werden, z. B. durch Adhäsion, äußere Kräfte oder Druckunterschiede zwischen der Innen- und Außenseite der Kapsel. In Experimenten wurde der Adhäsionsradius der Kapsel oder die zum Zusammendrücken der Kapsel benötigte Kraft gemessen. In der vorliegenden Dissertation wird die Adhäsion von Mikrokapseln und die Deformation durch äußere Kräfte auf theoretischem Wege untersucht. Es wird mit Mitteln der Elastizitätstheorie ein Modell entwickelt, mit dem sich die Deformation der Kapsel in Abhängigkeit von den angreifenden Kräften beschreiben läßt. In einer systematischen Untersuchung werden die Vorhersagen des Modells mit experimentellen Daten verglichen, um daraus die elastischen Parameter zu extrahieren.Item Open Access Einfluss paramagnetischer Defekte auf Transport und Rekombination in mikrokristallinem Silizium(2003) Bronner, Wolfgang; Mehring, Michael (Prof. Dr. rer. nat.)Dünne Halbleiterschichten haben ein großes technologisches Potential. TFT-Flachbildschirme oder Dünnschichtsolarzellen sind bereits etablierte Produkte auf dem Markt. Zu den aussichtsreichen Materialsystemen für derartige Anwendungen gehört mikrokristallines Silizium. Die Struktur von mikrokristallinem Silizium im Übergangsbereich vom amorphen zum einkristallinen Silizium ergibt fundamentale grundlagenphysikalische Fragestellungen. Der Schwerpunkt dieser Arbeit liegt auf der Untersuchung von mikrokristallinem Silizium. Ergänzend werden Untersuchungen an polymorphen Siliziumdünnfilmen vorgestellt. Ein breites Spektrum an experimentellen Methoden ermöglicht den Zugang zu vielseitigen Fragestellungen. Dabei handelt es sich um die konventionelle Elektronenspinresonanz (ESR) im Hochfeld, elektrisch detektierte ESR und um elektrooptische Experimente, wie das Experiment der modulierten Photoströme, die konstante Photostrommethode, die Methode des stationären Ladungsträgergitters und stationäre Photostrommessungen bei tiefen Temperaturen. Wie in dieser Arbeit anhand einer Computersimulation gezeigt wird, unterliegen die Ladungsträgerelektronen im mikrokristallinen Silizium einem Spinaustauschprozess. Bei tiefen Temperaturen erfolgt der Photostromtransport durch Energy-Loss Hopping auf Bandausläuferzuständen. Mit Hilfe der elektrisch detektierten ESR konnten Transport- und Rekombinationspfade in den Materialsystemen aufgeklärt werden. Das paramagnetischen Defekten dabei eine bedeutende Rolle zukommt, werden durch die Messungen an einer elektronenbestrahlten mikrokristallinen Probe untermauert.Item Open Access TRSS: a new version of program TRS for a different geometry(1992) Schmitz, Joachim; Trebin, Hans-Rainer; Rössler, UlrichQuantum resonances in the bands of semiconductors under uniaxial stress provide very detailed information on the band parameters. However, the analysis of experimental data is difficult. Computer programs based on an adequate theoretical model make this task easier. Program TRSS calculates energy eigenvalues, wave functions and oscillator strengths for direct inter- and intraband dipole transitions. The magnetic field is applied parallel to the [001] crystal axis while the uniaxial stress is directed perpendicular [100] to it.