Universität Stuttgart
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Item Open Access Prüfgerechter Entwurf und Test hochintegrierter Schaltungen(1992) Wunderlich, Hans-Joachim; Schulz, Michael H.Der Beitrag gibt einen Überblick über die wichtigsten praxisrelevanten Teststrategien, wobei unter einer Teststrategie nicht nur die Verfahren zur Testsatzerzeugung und zur eigentlichen Testdurchführung, sondern auch das zugrunde liegende Fehlermodell und die erforderlichen testfreundlichen Entwurfsmaßnahmen, die die Voraussetzung für die Anwendung dieser Verfahren darstellen, zu verstehen sind. Es werden die gängigsten Methoden zum konventionellen externen Test vorgestellt und bewertet sowie das Prinzip der immer breitere Anwendung findenden Selbsttestmethoden und ihre Vorteile erläutert. Nach einem kurzen Ausblick auf die Fortschritte, die Verfahren zur automatischen Synthese testbarer Schaltungen erhoffen lassen, werden schließlich Aspekte des Systemtests und insbesondere das Boundary-Scan-Prinzip und die damit verbundenen Vorteile diskutiert.Item Open Access The synthesis of self-test control logic(1989) Haberl, Oliver F.; Wunderlich, Hans-JoachimIn recent years, many built-in self-test techniques have been proposed based on feedback shift-registers for pattern generation and signature analysis. But in general, these test-registers cannot test several modules of the chip concurrently, and they have to be controlled by external automatic test equipment. The authors propose a method to integrate additional test-control logic into the chip. On the basis of a register-transfer description of the circuit, the test control is derived, and a corresponding finite automation is synthesized. A hardware implementation is proposed, resulting in circuits where the entire self-test only consists in activating the test mode and clocking and evaluating the overall signature.Item Open Access The pseudoexhaustive test of sequential circuits(1992) Wunderlich, Hans-Joachim; Hellebrand, SybilleThe concept of a pseudoexhaustive test for sequential circuits is introduced in a way similar to that which is used for combinational networks. Using partial scan all cycles in the data flow of a sequential circuit are removed, such that a compact combinational model can be constructed. Pseudoexhaustive test sequences for the original circuit are constructed from a pseudoexhaustive test set for this model. To make this concept feasible for arbitrary circuits a technique for circuit segmentation is presented which provides special segmentation cells as well as the corresponding algorithms for the automatic placement of the cells. Example circuits show that the test strategy requires less additional silicon area than a complete scan path. Thus the advantages of a partial scan path are combined with the well-known benefits of a pseudoexhaustive test, such as high fault coverage and simplified test generation.Item Open Access 10 Gbit/s monolithic integrated Msm-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim-Item Open Access Erfassung und Modellierung komplexer Funktionsfehler in Mikroelektronik-Bauelementen(1992) Stern, Olaf; Wunderlich, Hans-JoachimEs wird ein Verfahren vorgestellt, das für die Grundzellen einer Zellbibliothek layoutabhängig die möglichen Fehlfunktionen bestimmt, die durch Fertigungsfehler verursacht werden können. Eingabe für das Verfahren sind neben dem Layout einer Zelle die Prozeßparameter und die Defektverteilungen, Ausgabe sind die realistischen Fehlfunktionen mit ihren Auftrittswahrscheinlichkeiten. Damit können Testerzeugung und Testablauf beschleunigt, schwer testbare Fehler bestimmt und ihre Ursachen lokalisiert und beseitigt werden.Item Open Access 1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs(1994) Hurm, Volker; Benz, Willi; Berroth, Manfred; Fink, Thomas; Fritzsche, Daniel; Haupt, Michael; Hofmann, Peter; Köhler, Klaus; Ludwig, Manfred; Mause, Klaus; Raynor, Brian; Rosenzweig, JosefThe first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.Item Open Access Parallel self-test and the synthesis of control units(1991) Eschermann, Bernhard; Wunderlich, Hans-JoachimMost self-test techniques are implemented with so-called multifunctional test registers at any specific time either used for pattern generation or for response analysis. In a parallel self-test, however, test registers are used for pattern generation and response analysis simultaneously. In this paper a novel circuit structure for controllers with parallel self-test is presented, which does not result in a loss of fault coverage. By using a dedicated synthesis procedure, which considers the self-test hardware while generating the circuit structure instead of adding it after the design is completed ("synthesis for testability"), the self-test overhead can be kept low. The structure also facilitates realistic dynamic tests. As an example to illustrate the approach, the IEEE boundary scan controller is used.Item Open Access 15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors(1992) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.Item Open Access 10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Axmann, Albert; Benz, Willi; Berroth, Manfred; Osorio, Ricardo; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.Item Open Access 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer.