Universität Stuttgart

Permanent URI for this communityhttps://elib.uni-stuttgart.de/handle/11682/1

Browse

Filters

1991 - 199421

Settings

Author: search.filters.author.Köhler, Klaus

Search Results

Now showing 1 - 10 of 21
  • Thumbnail Image
    ItemOpen Access
    10 Gbit/s monolithic integrated Msm-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
    (1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    -
  • Thumbnail Image
    ItemOpen Access
    1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
    (1994) Hurm, Volker; Benz, Willi; Berroth, Manfred; Fink, Thomas; Fritzsche, Daniel; Haupt, Michael; Hofmann, Peter; Köhler, Klaus; Ludwig, Manfred; Mause, Klaus; Raynor, Brian; Rosenzweig, Josef
    The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.
  • Thumbnail Image
    ItemOpen Access
    15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors
    (1992) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.
  • Thumbnail Image
    ItemOpen Access
    10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs
    (1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Axmann, Albert; Benz, Willi; Berroth, Manfred; Osorio, Ricardo; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.
  • Thumbnail Image
    ItemOpen Access
    10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
    (1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer.
  • Thumbnail Image
    ItemOpen Access
    Indirect optically controlled pseudomorphic HEMT based MMIC oscillator
    (1992) Bangert, Axel; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Hurm, Volker; Kaufel, Gudrun; Köhler, Klaus; Rosenzweig, Josef; Schneider, Joachim
    For the first time an indirect optically controlled monolithic integrated oscillator was fabricated and examined experimentally. The oscillator was designed for a frequency of about 7 GHz. By illuminating a 60x60 μm2 photodiode by the light of a pigtailed laser diode (λ=840 nm), the free-running frequency of the oscillator was tunable in a range of more than 7 MHz. A locking range of more than 3 MHz was achieved. A phase shift in the output signal of nearly 180° has been observed.
  • Thumbnail Image
    ItemOpen Access
    Digital dynamic frequency dividers for broad band application up to 60 GHz
    (1993) Thiede, Andreas; Berroth, Manfred; Tasker, Paul; Schlechtweg, Michael; Seibel, Jörg; Raynor, Brian; Hülsmann, Axel; Köhler, Klaus; Bronner, Wolfgang
    A broadband dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.
  • Thumbnail Image
    ItemOpen Access
    10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
    (1992) Berroth, Manfred; Hurm, Volker; Lang, Manfred; Ludwig, Manfred; Nowotny, Ulrich; Wang, Zhigong; Wennekers, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.
  • Thumbnail Image
    ItemOpen Access
    20 Gb/s monolithic integrated clock recovery and data decision
    (1994) Wang, Zhigong; Berroth, Manfred; Hurm, Volker; Lang, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
    An IC for 20 Gb/s clock recovery and data decision was realised using 0.3 m gate-length QW-HEMTs. A narrow-band regenerative frequency divider with on-chip resonator filters is used for the clock recovery. The parallel processing concept is accepted for the data decision. The complex IC was tested on wafer using 5 and 10-Gb/s input data. The desired 10-GHz clock signal and regenerated data signals have been obtained. The 2x2 mm 2 IC has a power consumption of about 0.5 W at -3 volt supply voltage.
  • Thumbnail Image
    ItemOpen Access
    28-51 GHz dynamic frequency divider based on 0.15 μm T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs
    (1993) Thiede, Andreas; Tasker, Paul; Hülsmann, Axel; Köhler, Klaus; Bronner, Wolfgang; Schlechtweg, Michael; Berroth, Manfred; Braunstein, Jürgen; Nowotny, Ulrich
    The design and performance of a 28-51 GHz dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs with 0.15 μm mushroom-shaped gates are presented. The circuit has a power consumption of approximately 440 mW and a chip area of approximately 200x220 μm2.