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Treffer 11-16 von 16 (Suchzeit: 0.002 Sekunden).
Treffer Dokumente:
ErscheinungsdatumTitelAutor(en)
1993An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistorsThiede, Andreas; Berroth, Manfred; Nowotny, Ulrich; Seibel, Jörg; Bosch, Roland; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3-μm gate length quantum well HEMT'sWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1991A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistorsBerroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199110 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiverHurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199215 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistorsWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199328-51 GHz dynamic frequency divider based on 0.15 μm T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETsThiede, Andreas; Tasker, Paul; Hülsmann, Axel; Köhler, Klaus; Bronner, Wolfgang; Schlechtweg, Michael; Berroth, Manfred; Braunstein, Jürgen; Nowotny, Ulrich

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