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Authors: Nowotny, Ulrich
Lang, Manfred
Berroth, Manfred
Hurm, Volker
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim
Title: 20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors
Issue Date: 1991 Zeitschriftenartikel Microelectronic engineering 15 (1991), S. 323-326. URL
Abstract: A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3μm gate length. First results show a data rate of over 20 Gbit/s at 5 V supply voltage and 250 mW power consumption. The output voltage swing is adjustable between 0.3 V and 0.8 V for a 50 Ohm load. The out-put level can be varied between +1 V an -1 V. Comparison between simulation and measurement shows very good agreement.
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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