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Treffer Dokumente:

Erscheinungsdatum	Titel	Autor(en)
1989	Linear stark coupling to the ground state of effective mass acceptors	Köpf, Andreas; Ambrosy, Anton; Lassmann, Kurt
1982	The influence of the dynamic Jahn-Teller effect on the phonon-scattering mechanism at acceptors in semiconductors with cubic symmetry	Sigmund, Ernst; Lassmann, Kurt
1985	Frequency dependence of the specular and diffuse phonon scattering from silicon surfaces	Burger, S.; Lassmann, Kurt; Eisenmenger, Wolfgang
1984	Energy resolved measurements of the phonon ionization of D and A+ centers in silicon with superconducting Al tunnel junctions	Burger, Wilfried; Lassmann, Kurt
1987	Dependence of the phonoionization of A+-states in Si on uniaxial pressure	Groß, Peter; Gienger, Martin; Lassmann, Kurt
1987	Investigation of the Kapitza anomaly by frequency resolved phonon transport in silicon wafers	Klar, Wolfgang; Lassmann, Kurt
1986	Continuous high resolution phonon spectroscopy up to 12meV : measurement of the A+ binding energies in silicon	Burger, Wilfried; Lassmann, Kurt
1982	The distribution of splittings (Ultrasonic investigation of the acceptor ground state of Si(B) ; 2)	Zeile, Heinrich; Lassmann, Kurt
1982	The longitudinal and transverse relaxation rates of the strain-split two-level system (Ultrasonic investigation of the acceptor ground state of Si(B) ; 1)	Zeile, Heinrich; Harten, Ulrich; Lassmann, Kurt
1981	A study of the ground state of acceptors in silicon from thermal transport experiments	Goer, Anne M. de; Locatelli, Marcel; Lassmann, Kurt