| Erscheinungsdatum | Titel | Autor(en) |
| 1991 | 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver | Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1991 | 10 Gbit/s monolithic integrated Msm-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver | Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1991 | 10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs | Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Axmann, Albert; Benz, Willi; Berroth, Manfred; Osorio, Ricardo; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1992 | 10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links | Berroth, Manfred; Hurm, Volker; Lang, Manfred; Ludwig, Manfred; Nowotny, Ulrich; Wang, Zhigong; Wennekers, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1992 | 15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors | Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1992 | 16 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors | Thiede, Andreas; Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Seibel, Jörg; Gotzeina, W.; Sedler, Martin; Raynor, Brian; Köhler, Klaus; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Schneider, Joachim |
| 1991 | A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors | Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1991 | 20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors | Nowotny, Ulrich; Lang, Manfred; Berroth, Manfred; Hurm, Volker; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1991 | 8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs | Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim |
| 1992 | Indirect optically controlled pseudomorphic HEMT based MMIC oscillator | Bangert, Axel; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Hurm, Volker; Kaufel, Gudrun; Köhler, Klaus; Rosenzweig, Josef; Schneider, Joachim |
